parameter conditions forward rectified current forward surge current reverse current thermal resistance diode junction capacitance storage temperature ambient temperature = 55 c o 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r r ja c j t stg a a a o c/w o c pf 3.0 100 5.0 +175 -65 50 v = v t = 25 c r rrm j o v = v t = 100 c r rrm j o junction to ambient 60 300 ffm301g ffm302g ffm303g 50 100 200 35 70 140 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =3.0a f *5 maximum reverse recovery time, note 1 v f (v) *4 ffm304g ffm305g 400 600 280 420 1.30 -55 to +150 FFM306G ffm307g 800 1000 560 700 t rr (ns) *5 150 250 500 50 100 200 400 600 800 1000 (c) o operating temperature t, j 0.272(6.9) 0.248(6.3) 0.012(0.3) typ. 0.189(4.8) 0.165(4.2) 0.098(2.5) 0.075(1.9) 0.048 (1.2) typ. 0.048(1.2) typ. note 1. reverse recovery time test condition, i =0.5a, i =1.0a, i =0.25a frrr ffm301g thru ffm307g chip silicon rectifier 3.0a surface mount fast recovery rectifiers-50-1000v features smc package outline dimensions in inches and (millimeters) batch process design, excellent power dissipation offers ? better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. ? ? high current capability. ? fast switching for high efficiency. ? high surge current capability. ? glass passivated chip junction. ? lead- free parts meet rohs requirments. ? suffix "-h" indicates halogen-free parts, ex. ffm301-mg-h. ? epoxy: ul94-v0 rated frame retardant ? case: molded plastic, do-214ab / smc ? terminals: solder plated, solderable per mil-std-750, method 2026 ? polarity: lndicated by cathode band ? mounting position: any ? weight: approximated 0.19 gram mechanical data maximum ratings (at t =25 a o c unless otherwise noted) page 1/2 @ 2010 copyright by american first semiconductor
0.1 1.0 .01 50 rating and characteristic curves fig.1-typical forward characteristics fig.2-typical forward current derating curve average for ward current ,(a) fig.5-typical junction capacitance reverse voltage,(v) junction cap acitance,(pf) instantaneous for ward current ,(a) forward voltage,(v) pulse width 300us 1% duty cycle 0.6 1.2 1.8 2.4 3.0 3.6 70 60 50 40 30 20 10 0 (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr .01 .05 .1 .5 1 5 10 50 100 d.u.t. .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 3.0 ambient temperature ( c) fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive t =25 c j fig.4-maximum non-repetitive forward surge current peak for waard surge current ,(a) 20 0 40 60 80 100 number of cycles at 60hz 110 5 50 100 t =25 c j 8.3ms single half sine wave jedec method single phase half wave 60hz resistive or inductive load 0 20 40 60 80 100 120 140 160 180 200 0 10 ffm301g thru ffm307g page 2/2 www.first-semi.com
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